首页> 外国专利> METHOD FOR PRODUCING POROUS SILICON CARBIDE SINTERED COMPACT, AND POROUS SILICON CARBIDE SINTERED COMPACT HAVING PROTECTIVE LAYER

METHOD FOR PRODUCING POROUS SILICON CARBIDE SINTERED COMPACT, AND POROUS SILICON CARBIDE SINTERED COMPACT HAVING PROTECTIVE LAYER

机译:多孔碳化硅烧结体的制备方法及具有保护层的多孔碳化硅烧结体

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a porous SiC sintered compact, which can allow an original SiC sintered compact to have a targeted pore diameter surely and easily and be produced at a low cost.;SOLUTION: The method for producing the porous SiC sintered compact comprises the steps of: mixing an organic micro balloon 10 with silicon powder 11 at such a mixing ratio that a molar ratio of silicon becomes less to obtain a base stock 12 to be compact; firing a compact 14, which is obtained by compacting the base stock 12 to be compact, in a non-oxidizing atmosphere at the carbonization temperature to form a carbonized skeleton body 17; heating the carbonized skeleton body 17 up to such sintering temperature, that reaction sintering is performed between the carbonized skeleton body 17 and silicon, to obtain a semi-finished sintered compact 1A containing residual carbon; and sintering/decarbonizing the semi-finished sintered compact 1A in the air to obtain the porous SiC sintered compact having many open pores in a dispersedly-arranged state.;COPYRIGHT: (C)2016,JPO&INPIT
机译:解决的问题:提供一种制造多孔SiC烧结体的方法,该方法可以使原始SiC烧结体可靠且容易地具有目标孔径并且以低成本生产。多孔SiC烧结体包括以下步骤:将有机微囊体10与硅粉11以硅的摩尔比变得较小的混合比混合以得到要成型的基础原料12;在非氧化性气氛中,在碳化温度下,通过将基料12压制成坯而烧成坯14,从而形成碳化骨架17。将碳化的骨架体17加热至该烧结温度,在碳化的骨架体17与硅之间进行反应烧结,从而得到含有残留碳的半成品烧结体1A。在空气中对半成品烧结体1A进行烧结/脱碳,得到具有许多分散排列的开孔的多孔SiC烧结体。;版权所有:(C)2016,JPO&INPIT

著录项

  • 公开/公告号JP2015205780A

    专利类型

  • 公开/公告日2015-11-19

    原文格式PDF

  • 申请/专利权人 GUNZE LTD;

    申请/专利号JP20140085495

  • 发明设计人 KONISHI NORIFUMI;MAEDA SUSUMU;

    申请日2014-04-17

  • 分类号C04B38/08;C04B35/573;C04B41/85;

  • 国家 JP

  • 入库时间 2022-08-21 14:46:17

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