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SINTERED BODY FOR ZnO-MgO-BASED SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR

机译:ZnO-MgO基溅射靶的烧结体及其制备方法

摘要

PROBLEM TO BE SOLVED: To provide a ZnO-MgO-based sputtering target capable of stably forming a film at high speed, a sintered body for manufacturing a target and a manufacturing method of the sintered body.SOLUTION: There is provided a ZnO-MgO-based sintered body containing Mg of 3 to 50 mol% in terms of MgO and the balance ZnO with inevitable impurities and satisfying 0.01≤I1/I2≤1.00, where I1 is peak strength of the MgO phase in the ZnO-MgO sintered body and I2 is peak strength of the MgO phase in a mixed powder of a ZnO powder and a MgO powder (having random directions respectively) with a ratio equal to a ratio of Mg and Zn in the sintered body in an X ray diffraction peak.SELECTED DRAWING: None
机译:解决的问题:提供一种能够稳定地高速成膜的基于ZnO-MgO的溅射靶,用于制造靶的烧结体和该烧结体的制造方法。解决方案:提供一种ZnO-MgO。 Mg为3〜50mol%的Mg,余量为ZnO且不可避免地含有杂质且满足0.01≤I1/I2≤1.00,其中I1为ZnO-MgO烧结体中MgO相的峰值强度,且I2是XO衍射峰中ZnO粉末和MgO粉末(分别具有随机方向)的混合粉末中MgO相的峰值强度,其比率等于烧结体中Mg和Zn的比率。 : 没有

著录项

  • 公开/公告号JP2016190757A

    专利类型

  • 公开/公告日2016-11-10

    原文格式PDF

  • 申请/专利权人 JX NIPPON MINING & METALS CORP;

    申请/专利号JP20150071530

  • 发明设计人 KOIDO YOSHIMASA;

    申请日2015-03-31

  • 分类号C04B35/453;C23C14/34;C23C14/08;

  • 国家 JP

  • 入库时间 2022-08-21 14:46:02

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