首页> 外国专利> THERMAL FLOW SENSOR CHIP, METHOD FOR MANUFACTURING THERMAL FLOW SENSOR CHIP, AND FLOWMETER PROVIDED WITH THERMAL FLOW SENSOR CHIP

THERMAL FLOW SENSOR CHIP, METHOD FOR MANUFACTURING THERMAL FLOW SENSOR CHIP, AND FLOWMETER PROVIDED WITH THERMAL FLOW SENSOR CHIP

机译:热流传感器芯片,制造热流传感器芯片的方法以及具有热流传感器芯片的流量计

摘要

PROBLEM TO BE SOLVED: To prevent the occurrence of unevenness on a resist film and, hence, suppress a variation in sensor resistance value in a thermal flow sensor chip film deposition process, and further to improve the yield of a thermal flow sensor chip.SOLUTION: Positions of a silicon wafer (silicon substrate) 40 and a silicon wafer (silicon substrate) 52 are aligned so that a composition plane and a groove 52Gi formed on a reverse side of the silicon wafer (silicon substrate) 40 on which a circuit pattern 40SGi is formed face each other, and then a surface of the silicon wafer (silicon substrate) 52 on which the groove 52Gi is formed and a composition plane formed on the reverse side of the silicon wafer (silicon substrate) 40 are pasted together by low-temperature plasma joint.SELECTED DRAWING: Figure 1
机译:解决的问题:为了防止在抗蚀剂膜上出现不均匀现象,从而抑制热流传感器芯片膜沉积过程中传感器电阻值的变化,并进一步提高热流传感器芯片的良率。 :硅晶片(硅基板)40和硅晶片(硅基板)52的位置对准,从而在其上形成有电路图案的硅晶片(硅基板)40的背面上形成有成分平面和凹槽52Gi。彼此面对地形成40SGi,然后将硅晶片(硅基板)52的形成有槽52Gi的表面和在硅晶片(硅基板)40的背面上形成的组成面通过低电压粘贴在一起。等离子接头。选定的图:图1

著录项

  • 公开/公告号JP2016142709A

    专利类型

  • 公开/公告日2016-08-08

    原文格式PDF

  • 申请/专利权人 SAGINOMIYA SEISAKUSHO INC;

    申请/专利号JP20150021139

  • 发明设计人 ISHIKAWA NOBUYUKI;

    申请日2015-02-05

  • 分类号G01F1/692;G01F1/684;

  • 国家 JP

  • 入库时间 2022-08-21 14:45:45

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