LASER WITH QUANTUM WELLS HAVING HIGH INDIUM AND LOW ALUMINUM, WITH BARRIER LAYERS HAVING HIGH ALUMINUM AND LOW INDIUM, AND WITH REDUCED TRAPS

摘要

PROBLEM TO BE SOLVED: To avoid formation of traps at an interface between quantum wells and quantum well barriers.;SOLUTION: A VCSEL includes: one or more quantum wells having (Al)InGaAs; two or more quantum well barriers having Al(In)GaAs bonding one or more quantum well layers; and one or more transitional monolayers deposited between each quantum well layer and quantum well barrier, where the quantum wells, the barriers and the transitional monolayers can be substantially configured to have no trap. The one or more transitional monolayers include GaP, GaAs, and/or GaAsP. Alternatively, the VCSEL includes two or more transitional monolayers of AlInGaAs, and can be configured so that a barrier-side monolayer has lower In and higher Al compared to a quantum well-side monolayer that has higher In and lower Al.;SELECTED DRAWING: Figure 2;COPYRIGHT: (C)2016,JPO&INPIT