首页> 外国专利> POWDER HAVING HIGH THERMAL CONDUCTIVITY, HIGH ELECTRICAL INSULATION AND LOW THERMAL EXPANSION, HEAT RADIATION STRUCTURE MANUFACTURED FROM THE SAME, AND METHOD OF MANUFACTURING THE POWDER

POWDER HAVING HIGH THERMAL CONDUCTIVITY, HIGH ELECTRICAL INSULATION AND LOW THERMAL EXPANSION, HEAT RADIATION STRUCTURE MANUFACTURED FROM THE SAME, AND METHOD OF MANUFACTURING THE POWDER

机译:具有高导热性,高电绝缘性和低热膨胀性的粉末,由其制造的热辐射结构以及制造粉末的方法

摘要

PROBLEM TO BE SOLVED: To provide a powder from which a heat radiation structure of a semiconductor device can be manufactured at low cost, the powder having high thermal conductivity, high electrical insulation and low thermal expansion; a method of manufacturing the powder; and a heat radiation structure manufactured from the powder, such as a heat sink, a heat spreader a print circuit board, a heat radiation sheet, an encapsulation material or the like.;SOLUTION: There is provided a method for manufacturing a powder coated with AlN or Si3 N411, which is generated by depositing nanoparticles of Al or Si on inorganic particles 12, while stirring them, by a physical vapor deposition method, and heat-treating them under nitrogen atmosphere, and manufacturing various heat radiation structures using the powder. In the powder coated with AlN or Si3 N411, the inorganic particles 12 are Al2O3, Mg(OH)2, MgO, MgCO3, CaCO3 and SiO2 having an average particle diameter of 0.1 to 100 μm, and the nanoparticles 11 having an average particle diameter of 0.1 to 100 nm are deposited with a thickness of 0.1 to 100 μm on the inorganic particles 12 and then heat-treated for 3 to 6 hours at 400 to 600°C under nitrogen atmosphere.;SELECTED DRAWING: Figure 2;COPYRIGHT: (C)2016,JPO&INPIT
机译:解决的问题:提供一种可以以低成本制造半导体器件的散热结构的粉末,该粉末具有高导热率,高电绝缘性和低热膨胀性。粉末的制造方法;以及由粉末制成的散热结构,例如散热片,散热器,印刷电路板,散热片,封装材料等。 AlN或Si 3 N 4 11,其是通过将Al或Si的纳米颗粒沉积在无机颗粒12上,同时通过物理气相沉积法搅拌并加热而产生的在氮气氛下对其进行处理,并使用该粉末制造各种散热结构。在涂有AlN或Si 3 N 4 11的粉末中,无机颗粒12为Al 2 O 3 ,Mg(OH) 2 ,MgO,MgCO 3 ,CaCO 3 和SiO 2 然后,将平均粒径为0.1〜100nm的纳米颗粒11以0.1〜100μm的厚度沉积在无机颗粒12上,然后在400〜600℃下进行3〜6小时的热处理。 C在氮气气氛下;选图:图2;版权:(C)2016,JPO&INPIT

著录项

  • 公开/公告号JP2016017014A

    专利类型

  • 公开/公告日2016-02-01

    原文格式PDF

  • 申请/专利权人 GL MATERIALS INC;

    申请/专利号JP20140141070

  • 申请日2014-07-09

  • 分类号C01F7/02;C23C14/06;H01L23/373;H05K7/20;C23C14/58;C23C14/50;C04B35/628;

  • 国家 JP

  • 入库时间 2022-08-21 14:44:52

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