Carbon film deposition with extreme conformality, background technology

摘要

Embodiments of the invention relate to the deposition of conformal carbon-based materials. In one embodiment, the method includes patterning a substrate on the substrate by depositing a sacrificial dielectric layer having a predetermined thickness on the substrate, and removing portions of the sacrificial dielectric layer to expose the top surface of the substrate. Generating the formed features, introducing a hydrocarbon source, a plasma start gas, and a dilution gas into the processing chamber, wherein the volume flow of hydrocarbon source: plasma start gas: dilution gas is: Deposition of about 300 degrees Celsius to about 500 degrees Celsius to deposit a conformal amorphous carbon layer on the exposed top surface of the patterned features and substrate in a ratio of 1: 0.5: 2.0 Generating plasma at temperature, selectively removing the amorphous carbon layer from the top surface of the patterned feature and the top surface of the substrate, and the patterned feature Including the removal. [Selection] Figure 4