Increase the breaking strength of the die, a laser for smoothing the sidewall scribing and plasma etching

摘要

The embodiment, a hybrid wafer or substrate dicing process, to singulating the dies, including performing initial laser scribing, the subsequent plasma etch. Using a laser scribing process, the mask layer, the organic and inorganic dielectric layers, and can be removed element layer clean. Then, it is possible to terminate the laser etching process where the wafer or substrate that has been bared, or partially etched. In embodiments, the wafer is diced using a hybrid plasma etching method, isotropic etching is used to improve the side walls of the die after the anisotropic etching by the plasma based on a combination of NF3 and CF4. The isotropic etching, anisotropically-products anisotropically etched from the etched die sidewalls after die singulation, roughness, and / or scalloped shaped side wall is removedFIELD 1