Determining film thickness, refractive index, and extinction coefficient for real-time film strain determination and defect dimension measurement

摘要

The present disclosure relates to a method for inspecting a wafer, the wafer including a film deposited on a surface. The film may have a thickness that varies across the surface of the wafer. The method includes measuring film thickness, refractive index, and extinction coefficient across the surface of the wafer. Using this data, the strain of the film is determined in real time. The method also includes determining a defect size on the surface based at least on the strain of the film.