首页> 外国专利> Carbon nanowall array and method for producing carbon nanowall

Carbon nanowall array and method for producing carbon nanowall

机译:碳纳米壁阵列和生产碳纳米壁的方法

摘要

A carbon nanowall array (10) is provided with a substrate (1) and carbon nanowalls (2-9). The substrate (1) is composed of silicon, and includes protruding portions (11) and recessed portions (12). The protruding portions (11) and recessed portions (12) are formed in the direction (DR1) on one surface of the substrate (1). The protruding portions (11) and recessed portions (12) are alternately formed in the direction (DR2) perpendicular to the direction (DR1). Each of the protruding portions (11) has a length of 0.1-0.5 m in the direction (DR2), and each of the recessed portions (12) has a length of 0.6-1.5 m in the direction (DR2). The height of each of the protruding portions (11) is 0.3-0.6 m. Respective carbon nanowalls (2-9) are formed in the length direction (i.e., the direction (DR1)) of the protruding portions (11) of the substrate (1), said carbon nanowalls being formed on the protruding portions (11).
机译:碳纳米壁阵列(10)设置有基板(1)和碳纳米壁(2-9)。基板(1)由硅构成,并且包括凸部(11)和凹部(12)。凸部(11)和凹部(12)沿方向(DR1)形成在基板(1)的一个表面上。凸部(11)和凹部(12)在与方向(DR1)垂直的方向(DR2)上交替形成。每个突出部分(11)在方向(DR2)上的长度为0.1-0.5m,并且每个凹陷部分(12)在方向(DR2)上的长度为0.6-1.5m。每个突出部分(11)的高度为0.3-0.6m。在基板(1)的突出部(11)的长度方向(即方向(DR1))上形成有分别的碳纳米壁(2-9),该碳纳米壁形成在突出部(11)上。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号