METHOD OF FILLING FEATURE WITH HIGH ASPECT RATIO USING NON-FLUORINE CONTAINING TUNGSTEN

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus of vapor depositing and etching tungsten using a tungsten chloride reaction substance.SOLUTION: A method of completely filling a feature 313 of a substrate 303 with a tungsten layer 363 by repeating steps of 321-341 and steps of 341-351. In the steps 321-341, the substrate 303 is exposed to a tungsten chloride (WCl) precursor and a reduction agent under a first set condition and a first tungsten layer 343 is vapor deposited in the feature 313 of the substrate 303 by chemical vapor deposition (CVD). In the steps 341-351, the substrate is exposed to the WClprecursor and the reduction agent under a second set condition and the first tungsten layer 343 is etched.