Formation of the insulating nitride layer by a plasma generating apparatus method and plasma generation device

摘要

PROBLEM TO BE SOLVED: To provide a plasma film deposition method capable of forming a high quality film.;SOLUTION: In a plasma state, a superimposed bias voltage is applied to a bias voltage application part 11, and in a negative voltage interval, ions collide with a workpiece 14 to form a film layer on the workpiece surface, and in a positive voltage interval 53, ions with weak adhesion force on the film layer separate from the film layer and move, and electrons collide with the film layer to peel ions of weak adhesion force and a part of the film layer, leaving a first time strong adhesion film layer by a film of strong adhesion force, and by repeating the negative voltage interval and the positive voltage interval, a multilayer film is deposited which is composed of the first time strong adhesion film layer to n-th time strong adhesion film layer.;COPYRIGHT: (C)2013,JPO&INPIT