injection apparatus for measuring the amount of ion implantation in plasma immersion mode

摘要

Topic This invention regards the improvement of the injection rate measurement equipment of ion implantation.SolutionsThis device includes with the control circuit CC which presumes ion current by taking of module CUR and secondary electronic detector DSE and the difference of the aforementioned fill electric current and the electric current from the aforementioned secondary electronic detector which presume fill electric current. Furthermore, in order to pass through 1st rally electrode G1, A1, T1 and the electron which repulse the electric charge of the specified mark to which the aforementioned high energy secondary electronic detector, the electrode where three severs relations exactly mutually, namely, in order to pass through the electron has one orifice at least, is repulsed it has one orifice at least, after all it includes collector COL and P which support with selective electrode G3, A3 and T3 which have at least one orifice in order to pass through 2nd rally electrode G2, A2, T2 and the electron which repulse the electric charge of the opposite mark which is repulsed after all. Selective figure Figure 1