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Built-in self-test for stacked memory architecture

机译:内置的自检功能可用于堆叠内存架构

摘要

A built-in self-test for stacked memory architecture. An embodiment of a memory device includes a memory stack including one or more DRAM (dynamic random access memory) elements; and a system element for control of the memory stack. The system element includes a built-in self-test (BIST) engine to generate a write test event or a read test event for the memory stack, a test interface to receive test data for write test event or the read test events from the BIST engine, and a memory controller, the memory control to receive at least a portion of the test data from the test interface and to implement the write test event or read test event at the DRAM elements of the memory stack.
机译:内置的自检,用于堆叠内存体系结构。存储设备的一个实施例包括存储堆栈,该存储堆栈包括一个或多个DRAM(动态随机存取存储器)元件;以及用于控制存储器堆栈的系统元件。该系统元素包括一个内置的自测(BIST)引擎,用于为内存堆栈生成写测试事件或读测试事件;一个测试接口,用于接收来自BIST的写测试事件或读测试事件的测试数据引擎和存储器控制器,该存储器控制从测试接口接收至少一部分测试数据,并在存储器堆栈的DRAM元件上实现写测试事件或读测试事件。

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