Interfacial evaluation device of the interface evaluation method of the semiconductor substrate and the insulating film, and a semiconductor substrate and the insulating layer

摘要

PROBLEM TO BE SOLVED: To provide an evaluation method and an evaluation device of an interface capable of evaluating the interface of a semiconductor substrate and an insulation film formed on the surface thereof accurately, even if a silicon carbide substrate is used as the semiconductor substrate.;SOLUTION: A measurement area on the surface of a silicon carbide substrate X₁ subjected to passivation is irradiated with excitation light and a measurement wave, and a first carrier life τ_a in the silicon carbide substrate X₁ is determined based on the reflection measurement wave or transmission measurement wave thereof. An insulation film X₂ is formed on the surface of the silicon carbide substrate X₁, a measurement area in the insulation film X₂ is irradiated with excitation light and a measurement wave, and a second carrier life τ_b in the silicon carbide substrate X₁ is determined based on the reflection measurement wave or transmission measurement wave thereof. The interface of the silicon carbide substrate X₁ and the insulation film X₂ is evaluated from the first carrier life τ_a and second carrier life τ_b.;COPYRIGHT: (C)2014,JPO&INPIT