PROBLEM TO BE SOLVED: To make it unnecessary to perform the measurement work of a thermal resistance after a power cycle test, and to highly accurately apply a thermal stress by automatically adjusting stress currents, and to achieve the power saving of the evaluation work of the reliability of an IGBT(Insulated Gate Bipolar Transistor).;SOLUTION: A power cycle testing device includes: a function for calculating a temperature coefficient K of an IGBT 21 for test; a function for applying second currents I3 for measurement to the IGBT 21 for test after applying stress currents I1, and for measuring a voltage between the collector/emitter Vce of the IGBT 21 for test; and a function for calculating a junction temperature Tj of the IGBT for test from the measured voltage Vce and the temperature coefficient K.;COPYRIGHT: (C)2014,JPO&INPIT
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