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TUNNEL FIELD-EFFECT TRANSISTOR (TFET) WITH SUPERSTEEP SUB-THRESHOLD SWING
TUNNEL FIELD-EFFECT TRANSISTOR (TFET) WITH SUPERSTEEP SUB-THRESHOLD SWING
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机译:具有超亚阈值摆动的隧道场效应晶体管(TFET)
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摘要
Technologies are generally described herein generally relate to tunnel field-effect transistor (TFETs) structures with a gate-on-germanium source (GoGeS) on bulk silicon substrate for sub 0.5V (VDD) operations. In some examples, the GoGeS structure may include an increase in tunneling area and, thereby, a corresponding increases in the ON-state current ION. In order to achieve supersteep sub-threshold swing, both the lateral tunneling due to gate electric-field and the non-uniform tunneling at the gate-edge due to field-induced barrier lowering (FIBL) may be suppressed through selection of component dimension in the device structure. Example devices may be fabricated using CMOS fabrication technologies with the addition of selective etching in the process flow.
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Sub Sub>)的操作。在一些示例中,GoGeS结构可以包括增加的隧穿面积,从而相应地增加导通状态电流I ON Sub>。为了实现超陡峭的亚阈值摆幅,可以通过选择以下组件的尺寸来抑制由于栅极电场引起的横向隧穿和由于场致势垒降低(FIBL)引起的栅极边缘处的不均匀隧穿。设备结构。可以使用CMOS制造技术制造示例设备,并在工艺流程中添加选择性蚀刻。