首页> 外国专利> STRESS-INDUCED BANDGAP-SHIFTED SEMICONDUCTOR PHOTOELECTROLYTIC/PHOTOCATALYTIC/PHOTOVOLTAIC SURFACE AND METHOD FOR MAKING SAME

STRESS-INDUCED BANDGAP-SHIFTED SEMICONDUCTOR PHOTOELECTROLYTIC/PHOTOCATALYTIC/PHOTOVOLTAIC SURFACE AND METHOD FOR MAKING SAME

机译:应力诱导的带隙位移半导体光电/光催化/光电表面及其制造方法

摘要

Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.0, to activate the photocatalytic property of titania requires light of about 390 nm wavelength, which is in the ultra-violet, where sunlight is very low in intensity. A method and devices are disclosed wherein stress is induced and managed in a thin film of titania in order to shift and lower the bandgap energy into the longer wavelengths that are more abundant in sunlight. Applications of this stress-induced bandgap-shifted titania photocatalytic surface include photoelectrolysis for production of hydrogen gas from water, photovoltaics for production of electricity, and photocatalysis for detoxification and disinfection.
机译:二氧化钛是一种半导体和光催化剂,也是化学惰性的。具有3.0的带隙,要激活二氧化钛的光催化性能,需要约390 nm波长的光,该光处于紫外线下,在紫外线下,太阳光的强度非常低。公开了一种方法和装置,其中在二氧化钛的薄膜中诱发和控制应力,以便将带隙能量移动和降低到在阳光下更丰富的较长波长。这种由应力引起的带隙位移的二氧化钛光催化表面的应用包括用于从水中生产氢气的光电解,用于生产电力的光伏电池以及用于排毒和消毒的光催化。

著录项

  • 公开/公告号US2016293786A1

    专利类型

  • 公开/公告日2016-10-06

    原文格式PDF

  • 申请/专利权人 NANOPTEK CORPORATION;

    申请/专利号US201615187690

  • 发明设计人 JOHN M. GUERRA;

    申请日2016-06-20

  • 分类号H01L31/0445;H01L31/032;H01L31/028;H01L31/0352;H01G9/20;H01L31/0376;C25B1;C25B1/04;C25B11/04;H01L31/0224;H01L31/0392;

  • 国家 US

  • 入库时间 2022-08-21 14:34:00

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