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Non-Volatile Ternary Content-Addressable Memory with Resistive Memory Device
Non-Volatile Ternary Content-Addressable Memory with Resistive Memory Device
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机译:带有电阻存储设备的非易失性三元内容可寻址存储器
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摘要
A scheme for non-volatile ternary content-addressable memory with resistive memory device is proposed. The non-volatile ternary content-addressable memory comprises five transistors including a pair of search transistors with a first search transistor and a second search transistor, a read transistor, a write transistor and a match line transistor, wherein a match line is coupled to the match line transistor; and a pair of variable resistances have a first variable resistance and a second variable resistance. The pair of search transistors is coupled to the pair of variable resistances.
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