首页> 外国专利> Method for manufacturing ordered nanowire array of NiO doped with Pt in situ

Method for manufacturing ordered nanowire array of NiO doped with Pt in situ

机译:原位掺杂Pt的NiO有序纳米线阵列的制备方法

摘要

The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of H2PtCl6 so as to displace Pt on the Ni nanowires array by a displacement reaction; and oxidizing the Ni nanowires array attached with Pt in an oxidation oven to obtain the ordered nanowires array of NiO doped with Pt. The present invention is simple and practical and the sensitivity and reliability of the doped sensor on the gas of CO and H2 are greatly improved.
机译:本公开提供了一种用于原位掺杂Pt的NiO的有序纳米线阵列的制造方法,该方法包括:在耐高温且绝缘的衬底上生长Ni层;在Ni层上施加光致抗蚀剂,通过在光致抗蚀剂上施加电子束蚀刻在有序纳米线阵列的图案区域上构图,在有序纳米线阵列的图案区域上生长Ni,通过丙酮剥离光致抗蚀剂并蚀刻表面通过离子束刻蚀形成Ni层,以刻蚀掉生长在衬底表面上的Ni层,并在有序纳米线阵列的图案区域上留下Ni,以形成有序Ni纳米线阵列。将有序的Ni纳米线阵列浸入H 2 PtCl 6 溶液中,通过置换反应置换Ni纳米线阵列上的Pt。在氧化炉中对附着有Pt的Ni纳米线阵列进行氧化,得到掺杂有Pt的NiO的有序纳米线阵列。本发明简单实用,大大提高了掺杂传感器对CO和H 2 气体的灵敏度和可靠性。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号