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Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
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机译:具有垂直磁各向异性多层的自旋转移矩磁随机存取存储器
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摘要
The present invention is directed to a spin transfer torque magnetic random access memory (STTMRAM) element comprising a composite free layer including one or more stacks of a bilayer unit that comprises an insulator layer and a magnetic layer with the magnetic layer having a variable magnetization direction substantially perpendicular to a layer plane thereof; a magnetic pinned layer having a first fixed magnetization direction substantially perpendicular to a layer plane thereof; a tunnel barrier layer formed between the composite free layer and the magnetic pinned layer; and a magnetic fixed layer coupled to the magnetic pinned layer through an anti-ferromagnetic coupling layer. The magnetic fixed layer has a second fixed magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to the first fixed magnetization direction.
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