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TFT-LCD array substrate manufacturing method and LCD panel/device produced by the same

机译:TFT-LCD阵列基板的制造方法及其生产的液晶面板/装置

摘要

The present invention teaches a TFT-LCD array substrate manufacturing method: a) forming a gate electrode, a gate electrode insulator layer, an active layer, a source electrode and a drain electrode, a passivation layer, and a passivation layer via on top of the drain electrode on a glass substrate; b) depositing an ITO film on the glass substrate processed by the step a), removing through exposure and development the photo resist in a TFT area outside the passivation layer via and a part of the photo resist in a pixel area where gaps are to be formed, and revealing the ITO film outside the passivation layer via in the TFT area; c) removing a remaining photo resist in the pixel area where gaps are to be formed using a fourth dry etch, so that the ITO film on the gaps to be formed is revealed; d) removing the revealed ITO film using a third wet etch; and e) peeling the photo resist not yet removed, and forming an ITO electrode that is connected to the passivation layer via. The present invention also teaches a LCD panel and a LCD device having a TFT-LCD array substrate manufactured by foregoing method.
机译:本发明教导了一种TFT-LCD阵列基板的制造方法:a)在其顶部形成栅电极,栅电极绝缘体层,有源层,源电极和漏电极,钝化层和钝化层。玻璃基板上的漏电极; b)在经过步骤a)处理的玻璃基板上沉积ITO膜,通过曝光和显影去除钝化层过孔之外的TFT区域中的光致抗蚀剂和像素区域中将要形成间隙的一部分光致抗蚀剂形成,并在TFT区域中的钝化层的外部通孔露出ITO膜。 c)使用第四干蚀刻去除将要形成间隙的像素区域中的残留光致抗蚀剂,从而露出将要形成的间隙上的ITO膜; d)使用第三湿蚀刻去除露出的ITO膜; e)剥离尚未去除的光致抗蚀剂,并形成与钝化层通孔连接的ITO电极。本发明还教导了一种具有通过前述方法制造的TFT-LCD阵列基板的LCD面板和LCD装置。

著录项

  • 公开/公告号US9366932B2

    专利类型

  • 公开/公告日2016-06-14

    原文格式PDF

  • 申请/专利号US201314234340

  • 发明设计人 LI CHAI;

    申请日2013-10-21

  • 分类号G02F1/1333;G02F1/1368;G02F1/1362;

  • 国家 US

  • 入库时间 2022-08-21 14:31:44

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