Compensating source side resistance versus word line

摘要

A method and non-volatile storage system are provided in which the voltage applied to the source end of a NAND string depends on the location of the non-volatile storage element that is selected for sensing. This may be done without body-biasing the NAND string. Having the magnitude of the voltage applied to the source end of a NAND string depend on the location of the selected memory cell (without any body biasing) helps to mitigate failures that are dependent on which word line is selected during a sensing operation of one embodiment. Additionally, the magnitude of a read pass voltage may depend on either the source line voltage or the location of the selected memory cell.