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3DIC memory chips including computational logic-in-memory for performing accelerated data processing

机译:3DIC存储芯片,包括用于执行加速数据处理的内存计算逻辑

摘要

This disclosure relates to a three-dimensional (3D) integrated circuit (3DIC) memory chip including computational logic-in-memory (LiM) for performing accelerated data processing. Related memory systems and methods are also disclosed. In one embodiment, the 3DIC memory chip includes at least one memory layer that provides a primary memory configured to store data. The 3DIC memory chip also includes a computational LiM layer. The computational LiM layer is a type of memory layer having application-specific computational logic integrated into local memory while externally appearing as regular memory. The computational LiM layer and the primary memory are interconnected through through-silica vias (TSVs). In this manner, the computational LiM layer may load data from the primary memory with the 3DIC memory chip without having to access an external bus coupling the 3DIC memory chip to a central processing unit (CPU) or other processors to computationally process the data and generate a computational result.
机译:本公开涉及一种三维(3D)集成电路(3DIC)存储芯片,其包括用于执行加速数据处理的计算逻辑内存(LiM)。还公开了相关的存储器系统和方法。在一个实施例中,3DIC存储芯片包括至少一个存储层,其提供被配置为存储数据的主存储器。 3DIC存储芯片还包括计算LiM层。计算LiM层是一种存储层,其具有集成到本地存储器中的特定于应用程序的计算逻辑,同时从外部显示为常规存储器。 LiM计算层和主存储器通过硅通孔(TSV)互连。以这种方式,计算LiM层可以使用3DIC存储芯片从主存储器加载数据,而不必访问将3DIC存储芯片耦合到中央处理单元(CPU)或其他处理器的外部总线来计算数据并生成计算结果。

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