Nonvolatile logic gate circuit based on phase change memory

摘要

A nonvolatile logic gate circuit based on phase change memories, including a first phase change memory, a second phase change memory, a first controllable switch element and a first resistor, wherein a first end of the first phase change memory serves as a first input end of an AND gate circuit, a first end of the second phase change memory serves as a second input end of the AND gate circuit, a first end of the first controllable switch element is connected to a second end of the first phase change memory, a second end of the first controllable switch element is grounded; one end of the first resistor is connected to the first end of the second phase change memory, the other end of the first resistor is grounded; and the first end of the second phase change memory serves as an output end of the AND gate circuit.