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Applying edge-on photoluminescence to measure bulk impurities of semiconductor materials
Applying edge-on photoluminescence to measure bulk impurities of semiconductor materials
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机译:应用边缘发光法测量半导体材料中的大块杂质
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摘要
Provided are photoluminescence spectroscopy systems and methods for identifying and quantifying impurities in a semiconductor sample. In some embodiments, the systems and methods comprise a defocused collimated laser beam illuminating a first sample surface, and collection by a collection lens of photoluminescence from a sample edge at the intersection of the first surface with a substantially orthogonal second surface, wherein the first sample surface is oriented from about 0° to 90° with respect to a position parallel to the collection lens.
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