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Failure analysis and inline defect characterization

机译:故障分析和在线缺陷表征

摘要

Defect characterization and failure analysis are useful tools for analyzing and improving fabrication for semiconductor chips. By using a layout and a netlist in combination with images of semiconductors, defects can be identified and analyzed. Electrical simulation can be performed on the netlist, based on the presence of the defect that was detected. Layout geometries where the defect was detected can be binned, and a search can be performed of the remainder of the layout for similar groupings of layout geometries. Various representations of the semiconductor can be cross-mapped, including layout, schematic, and netlist. The presence of certain defects can be correlated to yield, to performance, and to other characteristics.
机译:缺陷表征和故障分析是用于分析和改进半​​导体芯片制造的有用工具。通过将布局和网表与半导体图像结合使用,可以识别和分析缺陷。可以基于检测到的缺陷的存在对网表执行电气仿真。可以对检测到缺陷的布局几何进行分类,并可以对布局的其余部分执行搜索,以对布局几何进行类似的分组。可以交叉映射半导体的各种表示形式,包括布局,原理图和网表。某些缺陷的存在可以与产量,性能以及其他特征相关。

著录项

  • 公开/公告号US9430606B2

    专利类型

  • 公开/公告日2016-08-30

    原文格式PDF

  • 申请/专利权人 SYNOPSYS INC.;

    申请/专利号US201414325294

  • 发明设计人 ANKUSH OBERAI;

    申请日2014-07-07

  • 分类号G06F17/50;G03F1;G03F1/36;

  • 国家 US

  • 入库时间 2022-08-21 14:29:51

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