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Integral fabrication of asymmetric CMOS transistors for autonomous wireless state radios and sensor/actuator nodes
Integral fabrication of asymmetric CMOS transistors for autonomous wireless state radios and sensor/actuator nodes
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机译:用于自主无线状态无线电和传感器/执行器节点的非对称CMOS晶体管的整体制造
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摘要
A method of arranging asymmetrically doped CMOS transistors in a semiconductor wafer that forms base cells within a plurality of logic standard cells in a CMOS process technology that includes conventional symmetric CMOS transistors having different threshold voltages. The asymmetrically doped CMOS transistors have a gate length exceeding 1.5 times the minimum gate length of the symmetric CMOS transistors. Regions defined by electrical junctions directly adjacent to the gate of the asymmetric transistors are formed by an implant mask exposing an area of the wafer on the source side of the transistor to receive the junction implant of the symmetric CMOS transistors with a higher threshold voltage while shielding the drain area, and a further implant mask exposing an area of the wafer on the drain side of the transistor to receive the junction implant of the symmetric CMOS transistors with a lower threshold voltage while shielding the source area.
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