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Method for making three dimensional memory array architecture using phase change and ovonic switching materials
Method for making three dimensional memory array architecture using phase change and ovonic switching materials
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机译:利用相变和电子交换材料制作三维存储阵列架构的方法
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摘要
Three dimension memory arrays and methods of forming the same are provided. An example three dimension memory array can include a stack comprising a plurality of first conductive lines separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines, such that the at least one conductive extension intersects a portion of at least one of the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension.
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