PROCESS FOR PREPARING N-TYPE CUO THIN FILMS, IN SITU, BY HYDROTHERMAL METHOD

摘要

The invention relates to a process for preparing n-type CuO thin films to be used as materials for solar cells, memory resistors and gas sensors. According to the invention, the process uses the hydrothermal method for depositing the n-type copper oxide layer onto a copper plate having two functions: of a substrate and of a precursor material for the thin film, in a medium of potassium hydroxide solution 2.5 M, in tight teflon autoclaves with steel jacket, which are heated to the temperature of 250°C for 30 min, to result in n-type semiconductor copper oxide thin films.