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METHOD OF TESTING A SEMICONDUCTOR ON INSULATOR STRUCTURE AND APPLICATION OF SAID TEST TO THE FABRICATION OF SUCH A STRUCTURE
METHOD OF TESTING A SEMICONDUCTOR ON INSULATOR STRUCTURE AND APPLICATION OF SAID TEST TO THE FABRICATION OF SUCH A STRUCTURE
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机译:在绝缘体结构上测试半导体的方法以及上述测试在这种结构的制造中的应用
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摘要
The invention concerns a method of testing a semiconductor-on-insulator type structure comprising a support substrate, a dielectric layer having a thickness of less than 50 nm and a semiconductor layer, the structure comprising a bonding interface between the dielectric layer and the support substrate or the semiconductor layer or inside the dielectric layer, characterized in that it comprises measuring the charge to breakdown (QBD) of the dielectric layer and in that information is deduced from the measurement relating to the hydrogen concentration in the layer and/or at the bonding interface. The invention also concerns a method of fabricating a batch of semiconductor-on-insulator type structures including carrying out the test on a sample structure from the batch.
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