AMORPHOUS METAL ALLOY ELECTRODES IN NON-VOLATILE DEVICE APPLICATIONS

摘要

A non-volatile memory device includes two electrodes and an active region disposed between and in electrical contact with the electrodes. The active region contains a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The electrode is an amorphous conductive material comprising 5 to 90 at% of a first metal, 5 to 90 at% of a second metal, and 5 to 90 at% of a metalloid, wherein the met-alloid is any of carbon, silicon, and boron. The metalloid, the first metal, and the second metal account for at least 70 at% of the amorphous conductive material.