首页> 外国专利> TILING OF SEEDS USED IN A CRUCIBLE FOR THE DIRECTIONAL SOLIDIFICATION OF SILICON COMPRISING SEEDS THAT ARE DISORIENTED WITH RESPECT TO THE ADJACENT SEED

TILING OF SEEDS USED IN A CRUCIBLE FOR THE DIRECTIONAL SOLIDIFICATION OF SILICON COMPRISING SEEDS THAT ARE DISORIENTED WITH RESPECT TO THE ADJACENT SEED

机译:用于定向凝固含硅种子的坩埚中种子的种子,而这些种子与相邻种子不同

摘要

The present invention relates to an organized assembly of adjacent silicon single crystals for the directional solidification of an ingot along a solidification direction, the oriented single crystals of which, observed over a section perpendicular to the solidification direction Z are such that the disorientation of an oriented single crystal with an adjacent single crystal is greater than 8°, the smallest angle between a normal to the joint separating the single crystal from an adjacent oriented single crystal and the directions 111 of said adjacent single crystal is greater than 4°, the smallest angle between the direction Z and the directions 100 of said single crystal is less than 25° and /or the smallest of the angles between the direction Z and the directions 111 of the single crystal is less than 10°, and the projection distance in a plane perpendicular to the direction Z, of the largest dimension of said single crystal, measured among the planes {111} and along the directions 110, is less than 40 mm.
机译:本发明涉及用于沿凝固方向定向凝固锭的相邻硅单晶的有组织的组装体,在垂直于凝固方向Z的截面上观察到的其定向单晶使得定向硅的取向失调。具有相邻单晶的单晶大于8°,将单晶与相邻定向单晶分离的接合点的法线与所述相邻单晶的方向<111>之间的最小角度大于4°,所述单晶的方向Z与方向<100>之间的最小角度小于25°,和/或单晶的方向Z与方向<111>之间的最小角度小于10°,和垂直于方向Z的平面中所述单晶的最大尺寸的投影距离,在平面{111}中并沿方向测量位置<110>小于40毫米。

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