DICE STRUCTURE-BASED STORAGE UNIT OF STATIC RANDOM ACCESS MEMORY

摘要

Proposed is a DICE structure-based storage unit of a static random access memory, comprising a redundant information latch circuit and a redundant selection circuit. The redundant information latch circuit is composed of four MOS tubes and comprises four data storage points. The redundant selection circuit is also composed of four MOS tubes, drains of the MOS tubes M0, M1, M2 and M3 being respectively connected to the four data storage points X0, X1, X2 and X3, wherein the sources of the M0 and the M2 are connected together to a bit line BL; sources of the M1 and the M3 are connected together to a bit line BLB; and gates of the four MOS tubes are connected together to a word line WL. The present invention, by only increasing a small area without increasing obvious complexity, can ensure that a storage unit is prevented from state turnover when being bombarded by particles, thereby ensuring data correctness.