METAL OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, DISPLAY SUBSTRATE AND DISPLAY DEVICE

摘要

Provided is a metal oxide thin film transistor, wherein an oxygen vacancy absorbing and removing layer (6) containing an oxygen vacancy absorbing and removing material is arranged between an active layer (3) and a source electrode (4) and/or between an active layer (3) and a drain electrode (5); and the standard Gibbs free energy of formation of the unit volume of an oxide in the oxygen vacancy absorbing and removing material is larger than that of the metal oxide in the active layer (3). Also provided are a display substrate comprising the metal oxide thin film transistor and a display device comprising the display substrate.