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METHODS FOR WET CHEMISTRY POLISHING FOR IMPROVED LOW VISCOSITY PRINTING IN SOLAR CELL FABRICATION

机译:太阳能电池制造中改善低粘度印刷的湿化学抛光方法

摘要

A method of manufacturing a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate; And forming a first fluidic matrix in an intermeshed pattern on the polished surface, wherein the polished surface is formed by the first fluidic matrix forming an intermeshed pattern comprising features of uniform thickness and width . In one embodiment, the method includes forming a silicon substrate using a method such as but not limited to diamond wire or slurry wafer ring processes. In another embodiment, the chemical This method is not however limited to, such as sulfuric acid (H 2 SO 4), acetic acid (CH 3 COOH), nitric acid (HNO 3), hydrofluoric acid (HF) and phosphoric acid (H 3 PO 4) And forming a polished surface on the silicon substrate using an etchant. In another embodiment, the etchant is an isotropic etchant. In another embodiment, the method includes providing a surface of a silicon substrate having a peak-to-valley roughness of at most 500 nanometers.
机译:公开了一种制造太阳能电池的方法。该方法包括在硅衬底上形成抛光表面;并在抛光表面上以网状图案形成第一流体基质,其中抛光表面是通过第一流体基体形成包括均匀厚度和宽度特征的网状图案而形成的。在一个实施例中,该方法包括使用诸如但不限于金刚石线或浆料晶片环工艺的方法形成硅衬底。然而,在另一个实施方案中,该化学方法不限于例如硫酸(H 2 SO 4),乙酸(CH 3 COOH),硝酸(HNO 3),氢氟酸(HF)和磷酸(H 3 PO 4)使用蚀刻剂在硅衬底上形成表面。在另一个实施例中,蚀刻剂是各向同性蚀刻剂。在另一个实施例中,该方法包括提供具有至多500纳米的峰谷粗糙度的硅衬底的表面。

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