首页> 外国专利> METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER

METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER

机译:包含减少的金属杂质量的半导体光刻中的共聚物的生产方法,以及用于生产共聚物的聚合引发剂的纯化方法

摘要

Disclosed are a method for producing a copolymer for semiconductor lithography containing less metal impurities, and a method for purifying a polymerization initiator for production of the copolymer. According to the present invention, the method for purifying a polymerization initiator to be used for production of a polymer comprises a filtering process for reducing the sodium content of the polymerization initiator solution to not more than 300 ppb with respect to the weight of the polymerization initiator by passing a solution of a polymerization initiator dissolved in an organic solvent through a filter having a nominal pore diameter of 1.0 m or smaller. In addition, the method for producing a copolymer for semiconductor lithography according to the present invention comprises a polymerization process for synthesizing the polymer for semiconductor lithography by a radical polymerization reaction in the presence of a polymerization initiator purified by the purification method of the present invention.;COPYRIGHT KIPO 2016
机译:公开了一种用于生产包含较少金属杂质的用于半导体光刻的共聚物的方法,以及用于纯化用于生产该共聚物的聚合引发剂的方法。根据本发明,用于纯化用于生产聚合物的聚合引发剂的方法包括用于将聚合引发剂溶液的钠含量相对于聚合引发剂的重量降低至不超过300ppb的过滤工艺。使溶解在有机溶剂中的聚合引发剂的溶液通过标称孔径为1.0 m或更小的过滤器。另外,根据本发明的用于制造半导体光刻的共聚物的方法包括聚合工艺,该聚合工艺用于在通过本发明的纯化方法纯化的聚合引发剂的存在下通过自由基聚合反应来合成用于半导体光刻的聚合物。 ; COPYRIGHT KIPO 2016

著录项

  • 公开/公告号KR20150127803A

    专利类型

  • 公开/公告日2015-11-18

    原文格式PDF

  • 申请/专利权人 MARUZEN PETROCHEMICAL CO. LTD.;

    申请/专利号KR20120037663

  • 发明设计人 SUZUKI YOUJIJP;

    申请日2012-04-12

  • 分类号G03F7/004;B01D63/02;

  • 国家 KR

  • 入库时间 2022-08-21 14:15:55

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