HIGH NEGATIVE ZETA POTENTIAL POLYHEDRAL SILSESQUIOXANE COMPOSITION AND METHOD FOR DAMAGE FREE SEMICONDUCTOR WET CLEAN

摘要

the present invention, (a) one or more metal ion-free base and ( b) a water-soluble metal ion-free polyhedral silsesquioxane and, (c) an oxidizing agent and, (d) metal ions - relates to a composition for removing particulate from comprising a glass of water, an integrated circuit substrate, (A), (b), (c) and to a composition obtained by combining components including (D). On the surface of the present invention it is also an integrated circuit device, (a), (b), (c) and (d) applying a composition containing, or, (a), (b), (c) and (d) by combining components comprising a step of applying the obtained composition, to a method for removing particulate matter from the surface of the integrated circuit device. ;