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4 GROUP IV TRANSITION METAL PRECURSORS PREPARATION METHOD THEREOF AND PROCESS FOR THE FORMATION OF THIN FILMS USING THE SAME
4 GROUP IV TRANSITION METAL PRECURSORS PREPARATION METHOD THEREOF AND PROCESS FOR THE FORMATION OF THIN FILMS USING THE SAME
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机译:4族过渡金属前驱物的制备方法及其使用相同薄膜形成薄膜的方法
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摘要
The present invention relates to a Group 4 metal precursor represented by the following Chemical Formula 1, wherein the Group 4 transition metal precursor is thermally stable and volatile, so that a high quality Group 4 transition metal thin film can be formed. [Chemical Formula 1] (Wherein, M is Ti, and Zr or Hf, R 1 is an aromatic hydrocarbon group, or a C6-C12 linear or branched alkyl, fluoroalkyl, linear or branched C1-C10 of C1-C10, R 2 , R 3 are each independently H or C1-C10 linear or branched alkyl group, or and a fluoroalkyl group of linear or branched C1-C10, R 4 and R 5 is a linear or branched C1-C10 each independently Lt; / RTI
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