首页> 外国专利> 4 GROUP IV TRANSITION METAL PRECURSORS PREPARATION METHOD THEREOF AND PROCESS FOR THE FORMATION OF THIN FILMS USING THE SAME

4 GROUP IV TRANSITION METAL PRECURSORS PREPARATION METHOD THEREOF AND PROCESS FOR THE FORMATION OF THIN FILMS USING THE SAME

机译:4族过渡金属前驱物的制备方法及其使用相同薄膜形成薄膜的方法

摘要

The present invention relates to a Group 4 metal precursor represented by the following Chemical Formula 1, wherein the Group 4 transition metal precursor is thermally stable and volatile, so that a high quality Group 4 transition metal thin film can be formed. [Chemical Formula 1] (Wherein, M is Ti, and Zr or Hf, R 1 is an aromatic hydrocarbon group, or a C6-C12 linear or branched alkyl, fluoroalkyl, linear or branched C1-C10 of C1-C10, R 2 , R 3 are each independently H or C1-C10 linear or branched alkyl group, or and a fluoroalkyl group of linear or branched C1-C10, R 4 and R 5 is a linear or branched C1-C10 each independently Lt; / RTI
机译:本发明涉及由以下化学式1表示的第4族金属前体,其中第4族过渡金属前体是热稳定且易挥发的,从而可以形成高质量的第4族过渡金属薄膜。 [化学式1](其中,M为Ti,Zr或Hf,R 1 为芳族烃基,或C6-C12直链或支链烷基,氟代烷基,直链或支链C1-C10 C 1 -C 10的基团,R 2 ,R 3 各自独立地为H或C1-C10直链或支链烷基,或与直链或支链C1-C10的氟烷基,R 4 和R 5 是直链或支链的C1-C10,各自独立地为Lt; / RTI>

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