trench gate power metal oxide semiconductorMOS device and fabrication method thereof

摘要

A trench gate type power MOS device according to the present invention includes an epitaxial layer formed on a substrate constituting a drain region, a well region formed in the epitaxial layer, and a plurality of gate trenches spaced apart from each other and lower than the surface of the well region Source regions formed at upper portions of both sidewalls of the trench gate patterns and lower than the surface of the well region; source regions formed at lower than the surface of the well region and trench gate regions formed below the surface of the well region; A plurality of cell contact regions disposed in the well region between the source regions formed lower than the surface of the well region and self-aligned on both side walls of the head insulating layer; And a wiring layer electrically connected to the cell contact regions.