PROCESSING SYSTEM FOR NON-AMBIPOLAR ELECTRON PLASMA(NEP) TREATMENT OF A SUBSTRATE WITH SHEATH POTENTIAL

摘要

A processing system is disclosed that includes a plasma source chamber that excites a source plasma to generate an electron beam, and a process chamber that receives the substrate for exposure of the substrate to an electron beam. The processing system also includes an electron injector that injects electrons from the source plasma into the electron beam as the electron beam enters the process chamber. The electron beam contains substantially the same number of electrons and positively charged ions in the process chamber. In one embodiment, the processing chamber also includes a magnetic field generator that generates a magnetic field in the process chamber to capture electrons contained in the electron beam and generate a voltage potential between the magnetic field generator and the substrate. The voltage potential accelerates the positively charged ions to the substrate and minimizes the electrons reaching the substrate.