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MANUFACTURING METHOD FOR TFT-LCD ARRAY SUBSTRATE, LIQUID CRYSTAL PANEL AND LIQUID CRYSTAL DISPLAY

机译:TFT-LCD阵列基板,液晶面板及液晶显示器的制造方法

摘要

The present invention relates to a method of manufacturing a TFT-LCD display substrate, comprising the steps of: a) forming a gate electrode, a gate electrode insulating layer, an active layer composed of an amorphous silicon layer and an ohmic contact layer on a glass substrate, Forming a via hole on the drain electrode, the relaxed layer, and the relaxed layer located above the drain electrode; b) depositing a conductive thin film on the glass substrate after step a), applying photoresist on the conductive thin film, removing the photoresist other than the relaxed via-holes in the TFT region after exposure and development, Removing a portion of the photoresist forming the gap portion, and exposing a conductive thin film other than the via hole in the relaxed layer in the TFT region; c) removing the remaining photoresist through the fourth dry etching step to form the pixel region in step b) and exposing the conductive thin film to form a spacing portion of the pixel region; d) removing the exposed conductive film in steps b) and c) via a third wet etching; e) peeling the unremoved photoresist to form a conductive electrode, and connecting the conductive electrode to the relaxed layer via hole; . The present invention also provides a TFT-LCD display substrate and a liquid crystal display device manufactured by applying the above method.
机译:本发明涉及一种TFT-LCD显示基板的制造方法,包括以下步骤:a)在其上形成栅极,栅极绝缘层,由非晶硅层和欧姆接触层组成的有源层。玻璃基板,在漏极,松弛层和位于漏极上方的松弛层上形成通孔。 b)在步骤a)之后在玻璃基板上沉积导电薄膜,在导电薄膜上施加光致抗蚀剂,在曝光和显影后去除TFT区域中的松弛通孔以外的光致抗蚀剂,去除形成的一部分光致抗蚀剂。间隙部分,并在TFT区域的松弛层中暴露除通孔以外的导电薄膜。 c)在步骤b)中通过第四干蚀刻步骤去除残留的光致抗蚀剂以形成像素区域,并暴露导电薄膜以形成像素区域的间隔部分; d)通过第三湿蚀刻在步骤b)和c)中去除暴露的导电膜; e)剥离未去除的光致抗蚀剂以形成导电电极,并将该导电电极通过孔连接至松弛层; 。本发明还提供通过应用上述方法制造的TFT-LCD显示基板和液晶显示装置。

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