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METHOD AND APPARATUS TO DEPOSIT PURE TITANIUM THIN FILM AT LOW TEMPERATURE USING TITANIUM TETRAIODIDE PRECURSOR
METHOD AND APPARATUS TO DEPOSIT PURE TITANIUM THIN FILM AT LOW TEMPERATURE USING TITANIUM TETRAIODIDE PRECURSOR
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机译:用四碘化钛前驱体在低温下沉积纯钛薄膜的方法和装置
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摘要
Methods of depositing highly conformal and pure titanium films at low temperatures are provided. Methods involve exposing a substrate to titanium tetraiodide, purging the chamber, exposing the substrate to a plasma, purging the chamber, and repeating these operations. Titanium films are deposited at low temperatures less than about 450 DEG C.
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