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CHARGED PARTICLE BEAM WRITING APPARATUS, WRITING METHOD USING CHARGED PARTICLE BEAM AND SHOT CORRECTING METHOD OF CHARGED PARTICLE BEAM WRITING
CHARGED PARTICLE BEAM WRITING APPARATUS, WRITING METHOD USING CHARGED PARTICLE BEAM AND SHOT CORRECTING METHOD OF CHARGED PARTICLE BEAM WRITING
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机译:带电粒子束写入装置,使用带电粒子束的写入方法和带电粒子束写入的校正方法
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摘要
The present invention relates to a charged-particle beam lithography apparatus, a lithography method using the charged-particle beam, and a shot correcting method in the charged-particle beam lithography. In a charged-particle beam lithography apparatus which writes a latent image of micropatterns on a resist layer using charged-particle beam with regard to a sample on which the resist layer is formed on a member to be patterned, a shot data making and processing device, which is involved in making shot data for each shot of the charged-particle beam to be irradiated on the resist layer is installed. To this end, used are design data for the micropatterns and correctional information for each of the cross-sectional size of the shot and a shot irradiation position which are obtained from in-plane distributional data for XY dimensional variations when patterns for measuring dimensions are formed, under a certain condition, on a testing sample which has a composition of layers corresponding to the sample.
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