MANUFACTURING METHOD OF WHITE LED USING NANO-STRUCTURE AND WHITE LED THEREBY

摘要

The present invention relates to a (phosphor-free) white light emitting element in which a phosphor application process is not necessary. A manufacturing method thereof comprises: a first step of a mask layer on a GaN substrate; a second step of patterning the mask layer to form a nano-pattern exposing a part of the GaN substrate; a third step of selectively growing GaN on the GaN substrate in correspondence with the nano-pattern to grow a GaN nano-structure to expose crystalline faces that are different from each other; and a fourth step of growing a nano-structure layer including an active layer on the GaN nano-structure, wherein in the active layer, the content of effective compositions is varied with the crystalline face of the GaN nano-structure. Accordingly, it is possible to adjust the light emitting wavelength. Therefore, the exposed crystalline face of the active layer is adjusted to control the content of each effective composition to adjust the light emitting wavelength of the active layer, and light emission of blue and yellow is induced in the course of epitaxial growing in a single element to embody white light emission.