METHOD OF CONTINUOUSLY FORMING BORON NITRIDE LAYER, METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR USING SAME, AND FIELD EFFECT TRANSISTOR MANUFACTURED THEREBY

摘要

Disclosed are a method of continuously forming a boron nitride (BN) layer, which can form a BN layer conveniently and efficiently by forming a carbon layer within a single furnace using a chemical vapor deposition (CVD) method and continuously converting the carbon layer into a BN layer, a method of manufacturing a field effect transistor using the same, and a field effect transistor manufactured thereby. According to an embodiment of the present invention, a method of manufacturing a BN layer can form a carbon layer on an inorganic substrate or a metal substrate within a furnace using a CVD process commonly used in a general semiconductor mass production process, and can continuously heat the carbon layer at high temperatures under certain conditions, thereby converting the carbon layer into a BN layer simply and conveniently.;COPYRIGHT KIPO 2016