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Apparatus depositing thin film and method of depositing thin film using ozone plasma

机译:装置沉积薄膜和使用臭氧等离子体沉积薄膜的方法

摘要

The present invention relates to a thin film deposition apparatus capable of generating an ozone plasma and using the same to deposit a thin film, and a thin film deposition method capable of depositing a thin film using an ozone plasma. A thin film deposition apparatus according to the present invention includes a reactor having an accommodating portion formed therein, a substrate supporter installed inside the reactor and on which a substrate is placed, a source gas supply line provided on the top of the substrate supporter, A source gas inlet and a reaction gas inlet through which a source gas for thin film deposition and a reaction gas including ozone (O 3 ) are respectively introduced into the reaction chamber are formed through a supply line, and a source gas and a reactive gas A gas jetting body having a source gas jetting port and a reactive gas jetting port for jetting toward the substrate support and an ozone plasma supplying means for supplying ozone plasma on the substrate.
机译:薄膜沉积装置和薄膜沉积方法技术领域本发明涉及一种能够产生臭氧等离子体并使用其沉积薄膜的薄膜沉积装置,以及一种能够使用臭氧等离子体沉积薄膜的薄膜沉积方法。根据本发明的薄膜沉积设备包括:反应器,其上形成有容纳部;基板支撑器,其安装在反应器内部并且在其上放置基板;源气体供应管线,其设置在基板支撑器的顶部,A。通过供给管线形成用于分别将用于薄膜沉积的原料气体和包括臭氧(O 3 )的反应气体引入反应室的原料气体入口和反应气体入口,并且源气体和反应气体气体喷射体具有向基板支撑体喷射的源气体喷射口和反应气体喷射口,以及在基板上供应臭氧等离子体的臭氧等离子体供应单元。

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