IN SITU FORMED DRAIN AND SOURCE REGIONS INCLUDING A STRAIN INDUCING ALLOY AND A GRADED DOPANT PROFILE

摘要

and a dopant profile of the transistor is to be obtained on the basis of in-situ doped strain inducing semiconductor alloy, where grade type dopant concentration can be established along the height direction. As a result, the semiconductor alloy may be placed in close proximity to the channel region, so as increase the overall strain inducing sikimyeo efficiency, may not excessively compromise the dopant profile that is eventually obtained. Furthermore, it can be integrated prior to growing the semiconductor alloy and optionally additional injection paper, so that it is possible to prevent the injection induced relaxation of internal strain. ;