- - SEMICONDUCTOR DEVICE HAVING VERTICAL CHARGE-COMPENSATED STRUCTURE AND SUB-SURFACE CONNECTING LAYER AND METHOD

摘要

In one embodiment, a semiconductor device is formed having vertical local charge-compensation trenches, trench control regions, and surface-underlying doping layers. The vertical local charge-compensating trenches comprise at least a pair of opposite conductivity type semiconductor layers. The trench control regions are configured to provide a substantially vertical channel region that electrically couples the source regions to the surface-underlying doping layers. The surface-underlying doping layers are further configured to electrically connect the drain end of the channel to the vertical local charge compensation trenches. The body regions are configured to separate the surface-underlying doping layers from the surface of the device. ; Vertical local charge-compensating trench, trench control region, surface-down doping layer, vertical channel region