/ 3D NON-VOLATILE MEMORY HAVING 3D ARRAY OF READ/WRITE ELEMENTS WITH EFFICIENT DECODING OF VERTICAL BIT LINES AND WORD LINES

摘要

A three-dimensional array of memory elements are formed over a plurality of layers of a plane located at different distances on the semiconductor substrate. Memory elements are reversibly changed with the level of electrical conductivity in response to the voltage difference applied to them. 3-dimensional array comprises a three-dimensional array of pole line (331, 332) from a substrate through a plurality of layers of flat. A first set of column lines 331 act as a local bit line for accessing memory elements with the array of word lines 340 on each of the planes. A second set (332) of the pole line is connected to the word line 340. An array of metal lines on the substrate (251, 252) is connected to enable the switch to the column line to provide access to the first set 331 and second set 332 of the pole line, whereby the bit of the three-dimensional array It provides access to each of the lines and the word lines.