3 P-N dimentional P-N junction solar cell and the preparation method thereof

摘要

The present invention relates to a substrate having a back electrode coated on an upper surface thereof; A P-type semiconductor thin film having a three-dimensional porous structure formed on the top surface of the back electrode; An N-type buffer layer formed on the surface of the three-dimensional porous P-type semiconductor thin film; And a transparent electrode formed on top of the three-dimensional porous P-type semiconductor thin film formed with the N-type buffer layer. The solar cell of the present invention is a PN junction solar cell including a photoactive thin film having a three-dimensional structure. By forming an N-type buffer layer on the surface of a P-type semiconductor thin film having a three-dimensional structure, The conversion efficiency can be shown. In addition, the manufacturing method can be easily manufactured through a low-cost process such as a solution process, and there is an advantage that it is economically advantageous in terms of manufacturing cost.